Isoelectronic centers and type-II quantum dots: Mechanisms for the green band emission in ZnSeTe alloy

Abstract

Te-doped and ZnTe-doped diluted ZnSeTe samples were grown by using metal-organic chemical vapor deposition. The green lights emitted from these two samples in the photoluminescence (PL) measurement have different peak emission energies and can be attributed to different emission mechanisms. For the Te-doped sample, the PL emission band is excitation laser power independent, the lifetime of the PL emission is short, and the PL emission could be attributed to the emission originated from Te isoelectronic centers. For the ZnTe-doped sample, the energy of the green emission band is laser power dependent, the PL lifetime is much longer than the Te-doped sample, and the PL emission could be attributed to the emission from type-II ZnTeZnSe quantum dots. The results demonstrate that there are two different mechanisms responsible for the green PL emission in ZnSeTe system and our growth methods provide a way of selecting one of the two mechanisms for the green light emission in this system. © 2009 American Institute of Physics.