Strain modulation of transport criticality in RuO2-based thick-film resistors

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Abstract

We show that in RuO2-glass composites the nonuniversal resistivity exponent can be modulated by an applied mechanical strain, signaled by a logarithmic divergence of the piezoresistive response at the percolation threshold. We interpret this phenomenon as being due to a tunneling-distance dependence of the transport exponent, supporting therefore a theory of transport nonuniversality proposed some years ago. © 2004 American Institute of Physics.

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APA

Vionnet-Menot, S., Grimaldi, C., Ryser, P., Maeder, T., & Strässler, S. (2004). Strain modulation of transport criticality in RuO2-based thick-film resistors. Applied Physics Letters, 85(23), 5619–5621. https://doi.org/10.1063/1.1835996

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