Journal ArticleOPEN ACCESS

Stable Low Electron Concentration β-Ga 2 O 3 Films Grown by Metal-Organic Chemical Vapor Deposition

  • Jiao T
  • Li Z
  • Li W
  • et al.
ECS Journal of Solid State Science and Technology (2020) 9(5) 055013
DOI: 10.1149/2162-8777/ab96ab
6Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

The Si-doped β -Ga 2 O 3 films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Then the films were annealed in oxygen to reduce the intrinsic defects effectively. The effect of the Si doping concentration and the oxygen annealing time on the properties of β -Ga 2 O 3 films was studied in detail. It was found that the crystal structure, surface morphology and electrical characteristics of the films can be changed regularly by adjusting the Si content and annealing time. β -Ga 2 O 3 films with high quality and stable electron concentration can be obtained by this method.

Cite

CITATION STYLE

APA

Jiao, T., Li, Z., Li, W., Dong, X., Zhang, Y., Zhang, B., & Du, G. (2020). Stable Low Electron Concentration β-Ga 2 O 3 Films Grown by Metal-Organic Chemical Vapor Deposition. ECS Journal of Solid State Science and Technology, 9(5), 055013. https://doi.org/10.1149/2162-8777/ab96ab

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free