Optical properties of InAlGaN heterostructures grown by rf-MBE

Abstract

We performed optical characterisation on high-quality InAlGaN thin films and InAlGaN/GaN quantum wells (QWs) grown by rf-MBE. Our main findings are that the In bowing coefficient in In0.08Al0.29Ga 0.63N alloys is found unexpectedly large (bI = 8.4 eV), and that the internal field in In0.08Al0.29Ga 0.63N/GaN QWs is strongly reduced (0.25 MV/cm) as a consequence of enhanced polarisation matching between well and barrier layers. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.