Fabrication and characterization of inkjet-printed 2D perovskite optoelectronic devices

Abstract

Two-dimensional (2D) halide perovskites have recently drawn significant interest due to their excellent optoelectronic and photoabsorption properties. Here, we present the large scale synthesis of solution-processed 2D (CH3(CH2)3NH3)2(CH3NH3)n − 1PbnI3n + 1 (n = 2, 3, and 4) perovskites, a family of layered compounds with composition-tunable bandgap, where inkjet printing was used to fabricate heterostructure, flexible photodetector devices. The crystal structure for n = 2, 3, and 4 perovskite was measured using optical absorption spectroscopy, which showed the peak absorption at 563.8, 601.4, and 609.4 nm. The inkjet-printed photodetector devices (n = 2) were photoresponsive to broadband incoming radiation in the visible regime, where the photoresponsivity was calculated to be R ∼ 21 mA/W at a low light intensity of F ∼ 0.6 mW/cm2. The flexible, inkjet-printed perovskite 2D heterostructures have significant potential for optoelectronic devices, which can enable broad possibilities with compositional tunability and versatility of the organohalide perovskites.