Abstract
Oxidized wafers of silicon are studied by means of X‐ray diffraction of a spherical wave in the Bragg (reflection) case. Oxide layers of thicknesses ranging form 50 to 940 nm are found to bend the samples with the measured radii of curvature between 650 and 50 m, respectively. Characteristic interference fringes arising in the topographs are shown to be due to the bending only. Good agreement is obtained between the experimental and calculated fringe spacings and intensity distributions. Copyright © 1987 WILEY‐VCH Verlag GmbH & Co. KGaA
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CITATION STYLE
Ba̧k‐Misiuk, J., Gronkowski, J., Härtwig, J., & Wierzchowski, W. (1987). X‐ray spherical‐wave diffraction in the bragg case for bent Si crystals. Physica Status Solidi (a), 99(2), 345–351. https://doi.org/10.1002/pssa.2210990204
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