Effect of Gamma Irradiation on the Magnetothermoelectric Properties of Extruded ZrO2-Modified Bi0.85Sb0.15

Abstract

Abstract—: Electrical and thermal properties of extruded unmodified and ZrO2-modified Bi0.85Sb0.15 samples have been studied as functions of gamma dose at temperatures from ~77 to 300 K in magnetic fields of up to ~74 × 104 A/m. The results demonstrate that irradiation of undoped and unmodified samples of the Bi0.85Sb0.15 solid solution to low gamma doses (1 Mrad) leads to the formation of radiation-induced donor defects, which scatter current carriers, raising the electrical conductivity (σ) of the material and reducing its thermoelectric power (α) and carrier mobility (μ). Raising the defect density leads to capture of current carriers, reducing their concentration and raising μ. The electron and lattice components of thermal conductivity have been evaluated a functions of gamma dose.