Self-assembled ErAs islands in GaAs for optical-heterodyne THz generation

Abstract

We report photomixer devices fabricated on a material consisting of self-assembled ErAs islands in GaAs, which is grown by molecular beam epitaxy. The devices perform comparably and provide an alternative to those made from low-temperature-grown GaAs. The photomixer's frequency response demonstrates that the material is a photoconductor with subpicosecond response time, in agreement with time-resolved differential reflectance measurements. The material also provides the other needed properties such as high photocarrier mobility and high breakdown field, which exceeds 2 × 105 V/cm. The maximum output power before device failure at frequencies of 1 THz was of order 0.1 μW. This material has the potential to allow engineering of key photomixer properties such as the response time and dark resistance. © 2000 American Institute of Physics.