This paper reports the effects on the optical and electrical properties of indium tin zinc oxide (ITZO) films by annealing and hydrogen plasma treatment. ITZO films were prepared by spin-coating using ITZO nanoink. The sheet resistance of the spin-coated ITZO was decreased to 155 Ω/square after annealing at 300°C. Subsequent inductively-coupled hydrogen plasma decreased the sheet resistance of the ITZO film further to 88 Ω/square due to the formation of a high density of O-H bonds and oxygen vacancies leaving a metal cluster on the surface, which is comparable to that of solution-processed ITO films. Although the transmittance of the hydrogen plasma-treated sample was decreased considerable by the formation of metal clusters, the transmittance and optical band gap could be enhanced without a deteriorating the electrical properties by removing the metal clusters using a H2SO4 solution. © 2013 Elsevier B.V. All rights reserved.
Lee, D. M., Kim, J. K., Hao, J., Kim, H. K., Yoon, J. S., & Lee, J. M. (2014). Effects of annealing and plasma treatment on the electrical and optical properties of spin-coated ITZO films. Journal of Alloys and Compounds, 583, 535–538. https://doi.org/10.1016/j.jallcom.2013.09.008