This paper indicated a theoretical model for describing the effects of the interface recombination on the heterojunction solar cell parameters based on single wall carbon nanotube and GaAs as p-n junction. By choosing the zigzag nanotube and GaAs layer, it is shown that by increasing the interface recombination, short circuit current and open circuit voltage decrease. Depletion current, J-V characteristic and ideality factor variation in terms of interface recombination have been calculated.
Khadije, K., Asgari, A., Movla, H., Mottaghizadeh, A., & Najafabadi, H. A. (2011). Effects of interface recombination on the performance of SWCNT\GaAs heterojunction solar cell. In Procedia Engineering (Vol. 8, pp. 275–279). https://doi.org/10.1016/j.proeng.2011.03.051