Effects of interface recombination on the performance of SWCNT\GaAs heterojunction solar cell

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Abstract

This paper indicated a theoretical model for describing the effects of the interface recombination on the heterojunction solar cell parameters based on single wall carbon nanotube and GaAs as p-n junction. By choosing the zigzag nanotube and GaAs layer, it is shown that by increasing the interface recombination, short circuit current and open circuit voltage decrease. Depletion current, J-V characteristic and ideality factor variation in terms of interface recombination have been calculated.

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APA

Khadije, K., Asgari, A., Movla, H., Mottaghizadeh, A., & Najafabadi, H. A. (2011). Effects of interface recombination on the performance of SWCNT\GaAs heterojunction solar cell. In Procedia Engineering (Vol. 8, pp. 275–279). https://doi.org/10.1016/j.proeng.2011.03.051

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