A number of ingots were grown from solar grade poly Silicon, to which Boron, Phosphorous and Gallium were added as dopants. The introduction of Gallium as a third dopant allowed for a better control of the resistivity and the doping type during ingot growth. Measured resistivity in this material is shown to be systematically higher than that calculated using Scheil's law for the dopants distribution and Klaassen's model for the majority carrier mobility. This resistivity underestimation is shown to be, at least partially, due to a reduction of the majority carrier mobility in highly compensated Si compared to Klaassen's model. A similar reduction is observed for the minority carrier mobility. We propose a correction term in the mobility calculation, to allow a greater accuracy in the prediction of the resistivity and mobility of compensated solar grade silicon. © 2010 Published by Elsevier Ltd.
Fourmond, E., Forster, M., Einhaus, R., Lauvray, H., Kraiem, J., & Lemiti, M. (2011). Electrical properties of boron, phosphorus and gallium co-doped silicon. In Energy Procedia (Vol. 8, pp. 349–354). Elsevier Ltd. https://doi.org/10.1016/j.egypro.2011.06.148