Metal–oxide–semiconductor field effect transistor-controlled field emission display

Abstract

A metal–oxide–semiconductor field effect transistor-controlled field emission display (MCFED) was fabricated to evaluate the validity of MCFEAs (MOSFET-controlled field emitter arrays) for display application. The electrical properties of FEAs, HVMOSFETs (high voltage MOSFETs), and MCFEAs were measured. The gate hole diameter of a fabricated FEA is 1.25 μm and the extraction gate voltage to obtain the anode current of 10 nA/tip is 71 V. The threshold voltage and the breakdown voltage of a HVMOSFET are 1.4 and 81 V, respectively. The I–V characteristics of a MCFEA show that the emission currents of FEA are well controlled by the control gate voltage of the HVMOSFET. To exclude the harmful effects generated during the packaging process, the performance of the MCFED was evaluated in a high vacuum chamber. It was proven that the uniformity of a conventional FED could be improved by the integration with a MOSFET.