Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode

Abstract

In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR). The material of which the electrodes are composed is of great importance, because TMR is very sensitive to the electronic states of the electrodes. Additionally, structural defects at the interface also have a significant influence on TMR. In this study, we employ B2-Fe3Sn as the magnetic electrode of MTJs. The use of Fe3Sn could solve the problem of lattice mismatch between Fe and MgO. However, the presence of dissimilar atoms in the electrodes or interface oxidation could be a source of defects at the interface. We find that MTJs with Fe3Sn exhibit a TMR of 50% and an asymmetric bias dependence.