High aspect ratio GeO2 nano- and microwires with waveguiding behaviour

Abstract

High aspect ratio GeO2 nano- and microwires have been grown by thermal treatment at 600°C of compacted Ge powder under argon flow. The wires have cross-sectional dimensions from less than 100 nm to about 1 μm, depending on the duration of the treatment, and lengths of up to about 2000 μm. Waveguide behaviour of the wires was demonstrated for visible light, which shows the potential applications of these structures for optical nanodevices. © IOP Publishing Ltd.