Ultrafast Polarization Sensitive Photodetector Based on MoS2/Ta2Pd3Se8 Hybrid Dimensional Heterostructure

Abstract

Van der Waals (vdWs) heterostructures based on low dimensional semiconducting materials offer tremendous opportunities in investigating next generation electronic and optoelectronic devices. Careful design based on combinations of different crystal structures and their band alignment engineering in such architectures are crucial for realizing specialized functionality and preferable performance. Here, a polarized light sensitive photodetector with high efficiency and ultrafast response speed based on hybrid dimensional MoS2/Ta2Pd3Se8 vdWs heterostructure, which is owing to the unilateral depletion region as formed between the n–n junction, is reported. In particular, under ultraviolet light irradiation, the device exhibits a high external quantum efficiency of 970%, and the device shows an ultrafast response speed of 1.3 µs under visible light excitation. Moreover, the 1D Ta2Pd3Se8 crystal introduces a highly anisotropic feature of the heterostructure, so as to realize selective detection to linear polarized light with an anisotropic ratio up to 0.66. This work sheds light on the potential applications of hybrid dimensional vdWs heterostructures, which may provide new insight for exploring high performance photodetectors with advanced functions.