Numerical study of the thermal and flow fields during the growth process of 800 kg and 1600 kg silicon feedstock

N/ACitations
Citations of this article
7Readers
Mendeley users who have this article in their library.

Abstract

Two-dimensional (2D) transient numerical simulations are performed to investigate the evolution of the thermal and flow fields during the growth of multi-crystalline silicon ingots with two different silicon feedstock capacities, 800 kg and 1600 kg. The simulation results show that there are differences in the structure of the melt flow. In the 1600 kg case, there is a reduction in the concavity of the crystal-melt interface near the crucible wall and an increase in the convexity of the interface at higher solidification fractions. Moreover, the Voronkov ratios, which are indicative of the formation of defects, become lower during the solidification process.

Cite

CITATION STYLE

APA

Nguyen, T. H. T., Chen, J. C., Hu, C., Chen, C. H., Huang, Y. H., Lin, H. W., … Yang, R. (2017). Numerical study of the thermal and flow fields during the growth process of 800 kg and 1600 kg silicon feedstock. Crystals, 7(3). https://doi.org/10.3390/cryst7030074

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free