Investigation of the electrical properties of porous silicon

Abstract

Porous silicon (PS) was prepared in a double-tank cell by using the electrochemical corrosion method and the samples with a Pt/PS/P+-Si/PS/Pt microstructure were obtained. The effects of the etching conditions and post-oxidation process of PS on the transverse I-V characteristics of this kind of microstructure were thoroughly investigated. It was shown that the transverse I-V characteristics of this kind of microstructure were mainly decided by the electrical properties of PS underlayer, which had nonrectifying properties of ohmic contacts.