ZrO 2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

Abstract

In this paper, we report the growth of ZrO2 thin films on TiN substrates using Plasma Enhanced Atomic Layer Deposition (PEALD) process starting from cyclopentadienyltris(dimetylamino)zirconium and oxygen plasma as precursor and reactant, respectively. The material properties - structure, morphology and composition - are investigated as a function of process parameters such as number of cycles, deposition temperature and plasma conditions. Electrical performances - in terms of breakdown field and leakage currents - are investigated as a function of deposition temperature on Au/ZrO2/TiN capacitors, giving an evidence for an impact of the crystallinity and impurities. © 2014 The Electrochemical Society. All rights reserved.