Flexible β-Ga 2 O 3 Nanomembrane Schottky Barrier Diodes

Abstract

Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β-Ga 2 O 3 nanomembranes (NMs). In order to realize flexible high power β-Ga 2 O 3 SBDs, sub-micron thick freestanding β-Ga 2 O 3 NMs are created from a bulk β-Ga 2 O 3 substrate and transfer-printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β-Ga 2 O 3 NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β-Ga 2 O 3 SBDs exhibit the record high critical breakdown field strength (E c ) of 1.2 MV cm −1 in the flat condition and 1.07 MV cm −1 of E c under the bending condition. Overall, flexible β-Ga 2 O 3 SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high-performance flexible applications.