An empirical model for GaN light emitters with dot-in-wire polar nanostructures

Abstract

A set of empirical equations were developed to describe the optical properties of III-nitride dot-in-wire nanostructures. These equations depend only on the geometric properties of the structures, enabling the design process of a III-nitride light emitter comprised of dot-in-wire polar nanostructures, to be greatly simplified without first-principle calculations. Results from the empirical model were compared to experimental measurements and reasonably good agreements were observed. Strain relaxation was found to be the dominant effect in determining the optical properties of dot-in-wire nanostructures.