Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma

Abstract

High-quality TiN films were successfully deposited on silicon and stainless-steel substrates at low temperature using an improved filtered cathode arc plasma technique developed in our lab. Atomic force microscope, x-ray diffractometer, x-ray photoelectron spectroscopy, and a nanoindenter were employed to characterize the TiN thin films. The microhardness of the TiN films have a high value up to 41GPa, which is far higher than that of TiN compounds deposited by conventional chemical vapor deposition and physical vapor deposition methods (20Gpa or so). The films are of a stronger preferred crystalline orientation, very smooth surface, and high reflectivity. The effects of the negative substrate bias on the preferred crystalline orientation, surface roughness, deposition rate, and microhardness of Tin thin films are discussed in detail.