Low ge content ultra-thin fin width (5nm) monocrystalline SiGe n-Type FinFET with low off state leakage and high ION/IOFFratio

Abstract

We successfully fabricate the Si0.8Ge0.2 channel fin field-effect-transistor (FinFET) with 5 nm ultra-thin fin width and high aspect ratio (~10 × ) on silicon-on-insulator (SOI) substrate by simple two-step dry etching. In comparison of the conventional Si FinFET, our proposed SiGe ultra-thin FinFETs (Si0.8Ge0.2 UT-FinFET) at VD = 0.75 V VG = 1.5 V shows higher ON-state current (1 mA/fin), even achieve lower OFF-state current (0.2 nA/fin) and steep subthreshold slope (SS) of 76 mV/decade, which is owing to the better gate control given by the ultra-thin fin channel. In addition, this work also exhibits the suppression of short channel effect (SCE) with very small drain induced barrier-lowering (DIBL) of 4 mV/V.