Superconducting epitaxial $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\delta }$$ YBa 2 Cu 3 O 7 - δ on $$\hbox {SrTiO}_{3}$$ SrTiO 3 -buffered Si(001)

Abstract

Thin films of optimally doped(001)-oriented $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }$$YBa2Cu3O7-$δ$are epitaxially integrated on silicon(001) through growth on a single crystalline $$\hbox {SrTiO}_{3}$$SrTiO3buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the $$\hbox {SrTiO}_{3}$$SrTiO3buffer enables high quality $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }$$YBa2Cu3O7-$δ$films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick $$\hbox {SrTiO}_{3}$$SrTiO3buffer, 50-nm thick $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }$$YBa2Cu3O7-$δ$films that exhibit a transition temperature of $$\sim $$∼93 K, and a narrow transition width (<5 K) are achieved. The integration of single crystalline $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }$$YBa2Cu3O7-$δ$on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications.