Fabrication and electrical property of individual ZnO nanowire based MESFET

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Abstract

A metal-semiconductor field effect transistor was constructed with a ZnO nanowire by nanomanipulation and electrical properties were measured by a semiconductor characterization system. The contacts between ZnO nanowire and Ta source/drain electrodes were Ohmic, while Schottky barrier was formed between ZnO and the tungsten probe working as the gate. This MESFET was demonstrated to be depletion mode and the transconductance maximum was-2.1pA/V with the gate voltage of-5V. Moreover, the corresponding threshold voltage reduced by 1.37V as the source-drain voltage increased from 0 V to 3 V. The results indicated that these devices could be used as storage components. © 2011 Published by Elsevier Ltd.

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Li, X., Qi, J., Zhang, Q., & Zhang, Y. (2012). Fabrication and electrical property of individual ZnO nanowire based MESFET. In Procedia Engineering (Vol. 27, pp. 1471–1477). Elsevier Ltd. https://doi.org/10.1016/j.proeng.2011.12.610

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