Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides

49Citations
Citations of this article
46Readers
Mendeley users who have this article in their library.
Get full text

Abstract

The integration of two-dimensional III-V InP-based photonic crystal and silicon wire waveguides is achieved through an accurate alignment of the two optical levels using mix-and-match deep ultraviolet (DUV)/electron beam lithography. The adhesively bonded structures exhibit an enhancement of light emission at frequencies where low group velocity modes of the photonic crystal line defect waveguides occur. Pulsed laser operation is obtained from these modes at room temperature under optical pumping. The laser light is coupled out of the Si waveguide via grating couplers directly to single mode fiber. © 2010 American Institute of Physics.

Cite

CITATION STYLE

APA

Karle, T. J., Halioua, Y., Raineri, F., Monnier, P., Braive, R., Le Gratiet, L., … Raj, R. (2010). Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides. In Journal of Applied Physics (Vol. 107). https://doi.org/10.1063/1.3319667

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free