Abstract
SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed.
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Nan, P., Liu, R., Chang, Y., Wu, H., Wang, Y., Yu, R., … Ge, B. (2018). Microscopic study of thermoelectric In-doped SnTe. Nanotechnology, 29(26). https://doi.org/10.1088/1361-6528/aabb0f
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