Investigation of aluminum-boron doping profiles formed by coalloying from screen-printed pastes

Citations of this article
Mendeley users who have this article in their library.


We present a detailed study on aluminum-boron doping profiles formed in silicon by alloying from screen-printed aluminum pastes containing boron additives. We show that an increase in the effective peak temperature T peak,eff (determined from phase diagram calculations) of the alloying process leads to higher concentrations of both Al and B atoms within the alloyed p+ region, resulting in (i) higher potential barriers for electrons, but also (ii) increased densities of recombination-active Al defects. While the improved potential barrier predominates for Tpeak,eff ≠770 C, the increased defect density prevails for T peak,eff ≠800 C, thus defining an optimal effective peak temperature. Furthermore, we show that, by increasing the amount of elemental B added to the paste, the acceptor concentration can be increased without affecting the defect density. Therefore, the optimal printing and firing conditions comprise high B amounts and low, adapted effective peak temperatures. For a B content of 0.9 wt% and Tpeak,eff = 765 C, we have achieved a saturation current density of 253 fA/cm2, corresponding to an implied open-circuit voltage of 665 mV, which demonstrates the high potential of B additives within Al pastes to further improve the efficiency of Si solar cells with Al-alloyed p+ rear. © 2013 The Authors.




Rauer, M., Schmiga, C., Tuschinsky, A., Glatthaar, M., & Glunz, S. W. (2013). Investigation of aluminum-boron doping profiles formed by coalloying from screen-printed pastes. In Energy Procedia (Vol. 43, pp. 93–99).

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free