Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al 2 O 3 as Dielectric Layers

5Citations
Citations of this article
6Readers
Mendeley users who have this article in their library.

Abstract

InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10^-9 A/cm^2 at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.

Author supplied keywords

Cite

CITATION STYLE

APA

Wang, X., Zhang, G. Z., Xu, Y., Gan, X. W., Chen, C., Wang, Z., … Liu, C. (2016). Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al 2 O 3 as Dielectric Layers. Nanoscale Research Letters, 11(1), 1–5. https://doi.org/10.1186/s11671-016-1232-0

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free