Megahertz operation of flexible low-voltage organic thin-film transistors

52Citations
Citations of this article
82Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Bottom-gate, top-contact (inverted staggered) organic thin-film transistors with a channel length of 1 μm have been fabricated on flexible plastic substrates using the vacuum-deposited small-molecule semiconductor 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C 10-DNTT). The transistors have an effective field-effect mobility of 1.2 cm2/V s, an on/off ratio of 107, a width-normalized transconductance of 1.2 S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420 ns per stage at a supply voltage of 3 V. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10 V. © 2013 Elsevier B.V. All rights reserved.

Cite

CITATION STYLE

APA

Zschieschang, U., Hofmockel, R., Rödel, R., Kraft, U., Kang, M. J., Takimiya, K., … Klauk, H. (2013). Megahertz operation of flexible low-voltage organic thin-film transistors. Organic Electronics: Physics, Materials, Applications, 14(6), 1516–1520. https://doi.org/10.1016/j.orgel.2013.03.021

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free