A modification of usual C-V measurement to more precisely characterize the band offsets in a-Si:H/c-Si heterojunctions

2Citations
Citations of this article
7Readers
Mendeley users who have this article in their library.

Abstract

Due to a strong inversion layer at the a-Si:H/c-Si interface, there are errors in the determination of the band offsets by usual capacitance-voltage (C-V) measurements. An improved C-V measurement was presented to correct the errors by a modification to the apparent diffusion potential Vint. In this paper, the improved C-V measurement is used to characterize the band offsets in a-Si:H/c-Si heterojunctions with a good precision. The modified apparent diffusion potential is determined from Vint and the minority carrier density at the c-Si interface deduced from the coplanar conductance measurements. The value of δEC=0.17±0.04eV between a-Si:H and c-Si is found by the improved C-V measurement with a precise determination of the band offsets.

Cite

CITATION STYLE

APA

Nie, G. Z., Zhong, C. L., Luo, L. E., & Xu, Y. (2015). A modification of usual C-V measurement to more precisely characterize the band offsets in a-Si:H/c-Si heterojunctions. Results in Physics, 5, 286–289. https://doi.org/10.1016/j.rinp.2015.10.002

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free