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Abstract

In this paper we review the developments of producing non-polar (i.e. m -plane and a -plane) and semi-polar (i.e. (20.1)-plane) wafers by ammonothermal method. The growth method and polishing results are described. We succeeded in producing 26 mm26 mm non- and semi-polar wafers. These wafers possess outstanding structural and optical properties, with threading dislocation density of the order of 10 4cm 3 . Detailed studies of homoepitaxial layers, as well as AlGaN heterostructures are also presented, showing the potential of studied ammonothermal substrates in the fabrication of optoelectronic devices.

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Kucharski, R., Zaja̧c, M., Doradziński, R., Rudziński, M., Kudrawiec, R., & Dwiliński, R. (2012, February). Non-polar and semi-polar ammonothermal GaN substrates. Semiconductor Science and Technology. https://doi.org/10.1088/0268-1242/27/2/024007

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