Procedures and properties for a direct nano-micro integration of metal and semiconductor nanowires on Si chips

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Abstract

1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. In present work we demonstrate the fabrication of 1D nano- and mesostructures between microstructured contacts formed directly on a silicon chip either by a thin film fracture (TFF) approach or by a modified vapor-liquid-solid (MVLS) approach. In principle, both approaches offer the possibilities to integrate these nano-meso structures in wafer-level fabrications. Electrical properties of these nano-micro structures integrated on Si chips and their preliminary applications in the direction of sensors and field effect transistors are also presented. Copyright © 2012 Dawit Gedamu et al.

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Gedamu, D., Paulowicz, I., Jebril, S., Kumar Mishra, Y., & Adelung, R. (2012). Procedures and properties for a direct nano-micro integration of metal and semiconductor nanowires on Si chips. Journal of Nanotechnology. https://doi.org/10.1155/2012/325732

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