This paper describes numerical methods for a quantum energy transport (QET) model in semiconductors, which is derived by using a diffusion scaling in the quantum hydrodynamic (QHD) model. We newly drive a four-moments QET model similar with a classical ET model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing numerical schemes and an iterative solution method with a relaxation method. Numerical simulations of electron transport in a scaled MOSFET device are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs. © 2012 Elsevier Inc.
Sho, S., & Odanaka, S. (2013). A quantum energy transport model for semiconductor device simulation. Journal of Computational Physics, 235, 486–496. https://doi.org/10.1016/j.jcp.2012.10.051