Research of the interaction mechanism between HCl and semiconductor metal oxides

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Abstract

Gas-sensitivity was investigated of n- and p-types conductivity semiconductor sensors based on zinc, indium and chrome oxides with the respect to hydrogen chloride (0.06 - 3 ppm). Disclosed were two mechanisms of interaction between N{cyrillic}S{cyrillic}1 and above metal oxides. It is demonstrated that HCl chemisorption results in decrease, and chlorine generation by HCl oxidation results in increase of semiconductor sensor resistance of n-type conductivity. Inverse relationship is observed for sensors with p-type conductivity. Calculation results of N{cyrillic}S{cyrillic}l conversion degree under the conditions of thermodynamic equilibrium of the reaction of HCl to Cl 2 oxidation are in good agreement with the experimental results for different sensor temperatures, gas humidity range and oxygen content. © 2009.

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Tsyrkina, T., Obvintseva, L., Kuchaev, V., Avetisov, A., Penkin, S., Sukhareva, I., & Dmitrieva, M. (2009). Research of the interaction mechanism between HCl and semiconductor metal oxides. In Procedia Chemistry (Vol. 1, pp. 184–187). https://doi.org/10.1016/j.proche.2009.07.046

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