In situ ultra high vacuum scanning probe microscopy (SPM) and low-temperature photoluminescence (PL) studies have been performed on Si-doped self-organized InAs/GaAs quantum dots samples to investigate the Si doping effects. Remarkably, when Si is doped in the sample, according to the SPM images, more small dots are formed when compared with images from undoped samples. On the PL spectra, high-energy band tail which correspond to the small dots appear, with increasing doping concentration, the integral intensity of the high-energy band tail account for the whole peak increase too. We relate this phenomenon to a model that takes the Si atom as the nucleation center for QDs formation.
Qian, Z., Songlin, F., Dong, N., Haijun, Z., Zhiming, W., & Yuanming, D. (1999). Si doping effect on self-organized InAs/GaAs quantum dots. Journal of Crystal Growth, 200(3), 603–607. https://doi.org/10.1016/S0022-0248(98)01401-8