Surface transfer doping of semiconductors

  • W. Chen
  • D. Qi
  • X. Gao
  • et al.
ISSN: 00796816
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Abstract

Surface transfer doping relies on charge separation at interfaces, and represents a valuable tool for the controlled and nondestructive doping of nanostructured materials or organic semiconductors at the nanometer-scale. It cannot be easily achieved by the conventional implantation process with energetic ions. Surface transfer doping can effectively dope semiconductors and nanostructures at relatively low cost, thereby facilitating the development of organic and nanoelectronics. The aim of this review is to highlight recent advances of surface transfer doping of semiconductors. Special focus is given to the effective doping of diamond, epitaxial graphene thermally grown on SiC, and organic semiconductors. The doping mechanism of various semiconductors and their possible applications in nanoelectronic devices will be discussed, including the interfacial charge transfer and the energy level alignment mechanisms. © 2009 Elsevier Ltd. All rights reserved.

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APA

W. Chen, D. Qi, X. Gao, & A. T. S. Wee. (2009). Surface transfer doping of semiconductors. Progress in Surface Science, 84, 279–321. Retrieved from http://dx.doi.org/10.1016/j.progsurf.2009.06.002

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