Polyaniline(PAni) doped with formic acid was synthesis by chemical polymerization method using ammonium persulphate as oxidizing agent. Polyaniline/n-silicon hetrojunction have been fabricated by spin coating of polyaniline onto n-type silicon substrates. I-V characteristic of these junction diode show rectifying behavior with rectifying ratio of about 100. The I-V characteristics of PAni/n-Si junction were measured at room temperature (303K) and after annulling at 363K. They are found to exhibit quality factors of 1.83 and 1.32, saturation current of 5×10-6A and 5×10 -4A, and barrier heights of 0.73eV and 0.61eV respectively. The photovoltaic properties of this hybrid solar cell were studied in the dark and under illumination investigated hybrid and was found to deliver short circuit current density Jsc =45μA/cm2, open circuit voltage Voc = 400mV, and solar cell efficiency η =0.3% under AM 1.5 simulated solar light with the intensity of 100mW/cm2. © 2010 Published by Elsevier Ltd.
Zaidan, K. M., Hussein, H. F., Talib, R. A., & Hassan, A. K. (2011). Synthesis and characterization of (PAni/n-Si)solar cell. In Energy Procedia (Vol. 6, pp. 85–91). Elsevier Ltd. https://doi.org/10.1016/j.egypro.2011.05.010