Highly crystalline CIS nanoink was synthesized using highly efficient microwave route. Thin films of CIS were fabricated using the developed ink by drop casting method. XRD pattern of CIS thin films indicates that a chalcopyrite phase with good crystallinity can be obtained using developed ink and that the composition of precursor ink can be transferred directly to the thin film without change in the stoichiometry. The developed ink alleviates the need of organic binders/dispersant and high temperature selenization using highly toxic H 2 Se gas (or Na 2 Se as a Se source) after deposition of thin film absorber layer. UV-VIS-NIR absorption analysis indicates that CIS thin film has a band gap of around 1.18 eV.
Kumar, M., Seelaboyina, R., Taneja, K., Madiraju, A. V., Keshri, A. K., Mahajan, S., & Singh, K. (2013). Synthesis of CIS Nanoink and Its Absorber Layer without Selenization. Conference Papers in Energy, 2013, 1–3. https://doi.org/10.1155/2013/739532