Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction

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Abstract

© 2015 by the authors; licensee MDPI, Basel, Switzerland. A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

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Marigó, E., Sansa, M., Pérez-Murano, F., Uranga, A., & Barniol, N. (2015). Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction. Sensors (Switzerland), 15(7), 17036–17047. https://doi.org/10.3390/s150717036

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