Ultrafast semiconductor spectroscopy using terahertz electromagnetic pulses

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Abstract

Terahertz electromagnetic pulses can serve as a new and unique tool for various types of spectroscopy. We first characterized the temporal and spatial properties of THz pulses generated from a large-aperture photoconductive antena, and then used them for the study of the ultrafast dynamics of electrons in semiconductros. We studied the dynamics of electrons generated by femtosecond optical pulses with positive and negative excess energies in GaAs and InP by observing the waveform of the emitted THz radiation. Subpicosecond intraband relaxation was observed with positive excess energies. With negative excess energies, a picosecond transition from the Urbach state to free carrier states was observed. © 2005 Elsevier Ltd. All rights reserved.

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Hattori, T., Arai, S., Ohta, K., Mochiduki, A., Ookuma, S. I., Tukamoto, K., & Rungsawang, R. (2005). Ultrafast semiconductor spectroscopy using terahertz electromagnetic pulses. Science and Technology of Advanced Materials, 6(6), 649–655. https://doi.org/10.1016/j.stam.2005.04.009

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