VOxthin films for gas sensor applications: EUROSENSORS 2015

Abstract

VOx-undoped and Ti-doped thin films were deposited onto insulating support (either fused silica or alumina) by means of rf reactive sputtering from a metallic vanadium target with mosaic Ti. Film thickness was varied between 200-600 nm. Argon-oxygen gas mixtures of different compositions were used for sputtering. Structural properties and phase composition of as-sputtered thin films were studied by X-ray diffraction at glancing incidence, GIXD and Scanning Electronic Microscopy (SEM). Electrical properties were determined by means of impedance spectroscopy at temperatures from RT to 400°C. V2O5thin films exhibited good response towards hydrogen, methane and propane.