Zener tunneling in semiconducting nanotube and graphene nanoribbon p-n junctions

65Citations
Citations of this article
79Readers
Mendeley users who have this article in their library.
Get full text

Abstract

A theory is developed for interband tunneling in semiconducting carbon nanotube and graphene nanoribbon p-n junction diodes. Characteristic length and energy scales that dictate the tunneling probabilities and currents are evaluated. By comparing the Zener tunneling processes in these structures to traditional group IV and III-V semiconductors, it is proved that for identical bandgaps, carbon based 1D structures have higher tunneling probabilities. The high tunneling current magnitudes for 1D carbon structures suggest the distinct feasibility of high-performance tunneling-based field-effect transistors.

Cite

CITATION STYLE

APA

Jena, D., Fang, T., Zhang, Q., & Xing, H. (2008). Zener tunneling in semiconducting nanotube and graphene nanoribbon p-n junctions. Applied Physics Letters, 93(11). https://doi.org/10.1063/1.2983744

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free