Zinc oxide nanowire based hydrogen sensor on SOI CMOS platform

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Here we report on the successful low-temperature growth of zinc oxide nanowires (ZnONWs) on silicon-on-insulator (SOI) CMOS micro-hotplates and their response, at different operating temperatures, to hydrogen in air. The SOI micro-hotplates were fabricated in a commercial CMOS foundry followed by a deep reactive ion etch (DRIE) in a MEMS foundry to form ultra-low power membranes. The micro-hotplates comprise p+ silicon micro-heaters and interdigitated metal electrodes (measuring the change in resistance of the gas sensitive nanomaterial). The ZnONWs were grown as a post-CMOS process onto the hotplates using a CMOS friendly hydrothermal method. The ZnONWs showed a good response to 500 to 5000 ppm of hydrogen in air. We believe that the integration of ZnONWs with a MEMS platform results in a low power, low cost, hydrogen sensor that would be suitable for handheld battery-operated gas sensors. © 2011 Published by Elsevier Ltd.




Guha, P. K., Santra, S., Covington, J. A., Udrea, F., & Gardner, J. W. (2011). Zinc oxide nanowire based hydrogen sensor on SOI CMOS platform. In Procedia Engineering (Vol. 25, pp. 1473–1476). https://doi.org/10.1016/j.proeng.2011.12.364

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