Increased level of integration on dynamic random access memory (DRAM) devices has been achieved by augmenting the number of vertical memory cells used for energy storage. Current methods of implementation include reducing the cell's thickness, while increasing its depth in order to maintain the same capacitance of stored electrical charges. We discuss a new metrology technique, the dome scatterometer, which utilizes both two-dimensional diffraction analysis and multivariate statistical methods to determine cell depth. The technique is rapid, non-destructive and accurate. © 1995 Elsevier Science B.V. All rights reserved.
Hatab, Z. R., Prins, S. L., Sohail, S., Naqvi, H., & McNeil, J. R. (1995). 16 MB DRAM trench depth characterization using dome scatterometry. Applied Surface Science, 86(1–4), 597–599. https://doi.org/10.1016/0169-4332(94)00393-9