The correlation between surface topography and tunneling conductance of an HF-etched polycrystalline silicon surface has been studied with the scanning force/tunneling microscope (AFM/STM) under the constant force mode in air. We clearly observed a development of the inhomogeneity of the tunneling conductance with increase of the bias voltage. The tunneling conductance at the grain boundary decreased faster than that far from the grain boundary. As a result, we confirmed that the grain boundary preferentially oxidized faster than the other area in air. © 1992.
Sugawara, Y., Fukano, Y., Kamihara, Y., Morita, S., Nakano, A., Ida, T., & Kaneko, R. (1992). AFM/STM investigation of polycrystalline Si surface. Ultramicroscopy, 42–44(PART 2), 1372–1375. https://doi.org/10.1016/0304-3991(92)90451-O