The Anderson transition in silicon inversion layers

Abstract

The Anderson transition has been studied in MOS and MNOS structures. The conductivity, magnetoresistance and Hall effect of this low temperature phenomenon are discussed. When the devices are metallic, that is, when the Fermi level lies in the extended states, a peaked structure is observed in the field effect mobility. The dependence of the structure on the reversible charge trapped within the gate dielectric of n and p-channel MNOS transistors has been investigated in an attempt to explain the mechanism giving rise to the structure. © 1976.