Anion-induced surface states for the ideal (100) faces of GaAs, AlAs and GaSb

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Abstract

We present a simple consistent tight-binding method to calculate the electronic properties of ionic semiconductor surfaces. The method is applied to calculate the anion-induced surface states of the ideal (100) faces of GaAs, AlAs and GaSb. It is shown that consistency is crucial to obtain the surface state levels and the Fermi energy, and that the surface perturbation penetrates three layers in the crystal. © 1986.

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Platero, G., Sánchez-Dehesa, J., Tejedor, C., Flores, F., & Muñoz, A. (1986). Anion-induced surface states for the ideal (100) faces of GaAs, AlAs and GaSb. Surface Science, 172(1), 47–56. https://doi.org/10.1016/0039-6028(86)90582-0

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