Cubic boron nitride based ceramics with silicon were sintered at 1350°C under a pressure of 5.0GPa. The effects of post-annealing on grain morphology, surface morphology, and photoluminescence of Si–cBN ceramics were investigated by scanning electron microscope and room temperature photoluminescence measurements. The results showed that the annealing treatment had great influence on cBN grain morphology, rather than the surface morphology. The luminescence intensity increased with annealing temperature and annealing time. The void-net structure formed by continuous distribution of SiOx particulate on the ceramic surface resulted in the emission band peaking at about 701.2nm, and the tense passivation of Si by SiOx led to the peak's low intensity. The near ultraviolet emission band peaking at about 317nm was attributed to the oxygen vacancies formed in cBN grain surface, caused by the scavenging of oxygen from the cBN grain surface by the added Si.
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