Beam test results for the RAPS03 non-epitaxial CMOS active pixel sensor

  • Biagetti D
  • Marras A
  • Meroli S
 et al. 
  • 1

    Readers

    Mendeley users who have this article in their library.
  • N/A

    Citations

    Citations of this article.

Abstract

Recently our group has been investigating the possibility of using a standard CMOS technology featuring no epitaxial layer to fabricate a sensor for charged particle detection. In this work we present the results obtained exposing sensors with 256×256 pixels (10×10μm pixel size, two different pixel layouts) to 180 GeV protons and positrons at the SuperProtoSynchrotron facility (CERN). We have investigated the different response of the two architectural options in terms of S/N, cluster width, intrinsic spatial resolution, efficiency. The results show a good Landau response, S/N about 22 with an average cluster size of 4.5 pixels, and an intrinsic spatial resolution of 1.5μm (order of 1/7th of the pixel size). © 2010 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • CMOS
  • Non-epitaxial
  • Pixel

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • D. Biagetti

  • A. Marras

  • S. Meroli

  • D. Passeri

  • P. Placidi

  • L. Servoli

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free