The bond orbital Hamiltonian for wurtzite semiconductors is developed. This method contains no fitting parameters, and all interaction parameters involved are directly related to the kp parameters for describing bulk bands near the Brillouin zone center. A comparative study of wurtzite GaN band structures between the bond orbital model and the kp method is also made. © 2004 Elsevier B.V.
Chen, C. N. (2004). Bond orbital model for wurtzite semiconductors. Physics Letters, Section A: General, Atomic and Solid State Physics, 329(1–2), 136–139. https://doi.org/10.1016/j.physleta.2004.06.083